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High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

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Abstract

High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

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Authors and Affiliations

  1. Institute of Microelectronics, Department of Electrical Engineering, Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan, 701, Taiwan, Republic of China

    Yung-Hao Lin & Ching-Ting Lee

  2. Da-Yeh University, Changhua, 515, Taiwan, Republic of China

    Ching-Ting Lee

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  1. Yung-Hao Lin
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  2. Ching-Ting Lee
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Correspondence to Ching-Ting Lee.

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Lin, YH., Lee, CT. High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method. J. Electron. Mater. 46, 5209–5214 (2017). https://doi.org/10.1007/s11664-017-5534-5

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  • DOI: https://doi.org/10.1007/s11664-017-5534-5

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