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Crystallization and Transport Properties of Amorphous Cr-Si Thin Film Thermoelectrics

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An Erratum to this article was published on 04 September 2014

Abstract

We studied the thermoelectric properties, crystallization, and stability of amorphous and nanocrystalline states in Cr-Si composite films. Amorphous films, prepared by magnetron sputtering, were transformed into the nanocrystalline state by annealing with in situ thermopower and electrical resistivity measurements. We have found that the amorphous state is stable in these film composites to about 550 K. Prior to crystallization, the amorphous films undergo a structural relaxation, detected by peculiarities in the temperature dependences of the transport properties, but not visible in x-ray or electron diffraction. The magnitude and temperature dependences of electrical conductivity and thermopower indicate that electron transport in the amorphous films is through extended states. The amorphous films are crystallized at annealing temperatures above 550 K into a nanocrystalline composite with an average grain size of 10–20 nm.

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Acknowledgements

This work in a part was supported by Government of Russian Federation, Grant 074-U01, and by the Russian Foundation for Basic Research under Grant No. 14-08-31177 mol_a. S.N.V. gratefully acknowledges financial support by Stipend of the President of the Russian Federation SP-543.2012.1.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Saint Petersburg, Russia

    S. V. Novikov & A. T. Burkov

  2. St. Petersburg National Research University of Information Technologies, Mechanics and Optics, Saint Petersburg, Russia

    A. T. Burkov

  3. Leibniz Institute for Solid State and Materials Research, Dresden, Germany

    J. Schumann

Authors
  1. S. V. Novikov
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  2. A. T. Burkov
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  3. J. Schumann
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Correspondence to S. V. Novikov.

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Novikov, S.V., Burkov, A.T. & Schumann, J. Crystallization and Transport Properties of Amorphous Cr-Si Thin Film Thermoelectrics. J. Electron. Mater. 43, 2420–2424 (2014). https://doi.org/10.1007/s11664-014-3101-x

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