Abstract
In the growing field of nanomaterials, SiC nanoparticles arouse interest for numerous applications. The inductively coupled plasma (ICP) technique allows obtaining large amount of SiC nanopowders from cheap coarse SiC powders. In this paper, the effects on the SiC structure of the process pressure, the plasma gas composition, and the precursor nature are addressed. The powders were characterized by X-ray diffraction (XRD), Raman and fourier transform infrared (FT-IR) spectroscopy, scanning electron microscopy (SEM) and high resolution electron microscopy (HREM), chemical analyses, BET and photon correlation spectroscopy (PCS) measurements. Whatever the precursor (α- or β-SiC), the nanoparticles were crystallised in the cubic β-SiC phase, with average sizes in the 20–40 nm range. Few residual grains of precursor were observed, and the decarburization due to the reductive Ar–H2 plasma lead to the appearance of Si nanograins. The stoichiometry of the final product was found to be controllable by the process pressure and the addition of methane.
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs11090-007-9072-4/MediaObjects/11090_2007_9072_Fig1_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs11090-007-9072-4/MediaObjects/11090_2007_9072_Fig2_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs11090-007-9072-4/MediaObjects/11090_2007_9072_Fig3_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs11090-007-9072-4/MediaObjects/11090_2007_9072_Fig4_HTML.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs11090-007-9072-4/MediaObjects/11090_2007_9072_Fig5_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs11090-007-9072-4/MediaObjects/11090_2007_9072_Fig6_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs11090-007-9072-4/MediaObjects/11090_2007_9072_Fig7_HTML.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs11090-007-9072-4/MediaObjects/11090_2007_9072_Fig8_HTML.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs11090-007-9072-4/MediaObjects/11090_2007_9072_Fig9_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs11090-007-9072-4/MediaObjects/11090_2007_9072_Fig10_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs11090-007-9072-4/MediaObjects/11090_2007_9072_Fig11_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs11090-007-9072-4/MediaObjects/11090_2007_9072_Fig12_HTML.jpg)
Similar content being viewed by others
References
Vassen R, Stöver D (1997) Phil Mag B 76:585
Vassen R, Kaiser A, Stöver D (1996) J Nucl Mater 233–237:708
Donato A, Borsella E, Botti S, Martelli S, Nannetti CA, Mancini MR, Morjan IJ (1996) Nucl Mater 233–237:814
Chae KW, Niihara K, Kim DY (1995) J Mat Sci Lett 14:1332
Endo H, Ueki M, Kubo HJ (1991) Mat Sci 26:3769
Vassen R, Stöver D (2001) Mat Sci Eng A 301:59
Fu Z, Ning J, Yang B, Wu W, Pan H, Xu P (2003) Mater Lett 57:1910
Ledoux MJ, Pham-Huu C (2001) CaTTech 5:226
Guichelaar PJ (1997) In: Carbide, nitride and boride materials synthesis and processing. Chapman and Hall
Setiowati U, Kimura SJ (1997) Am Ceram Soc 80:757
Hatakeyama F, Kanzaki SJ (1990) Am Ceram Soc 73:2107
Seong IS, Kim CH (1993) J Mater Sci 28:3277
Klein S, Winterer M, Hahn H (1998) Chem Vapor Depos 4:143
Chen LD, Goto T, Hirai TJ (1989) Mater Sci 24:3824
Yamada O, Miyamoto Y, Koizumi MJ (1986) Mater Res 1:275
Satapathy LN, Ramesh PD, Agrawal D, Roy R (2005) Mater Res Bull 40:1871
Suyama Y, Marra RM, Haggerty JS, Bowen HK (1985) Am Ceram Soc Bull 64:1356
Cauchetier M, Croix O, Luce M (1998) Adv Ceram Mat 3:548
Ando Y, Ohkohchi M, Uyeda R (1980) Jpn J Appl Phys 19:693
Inoue Y, Nariki Y, Tanaka KJ (1989) Mater Sci 24:3819
Hollabaugh CM, Hull DE, Newkirk LR, Petrovic JJ (1983) J Mater Sci 18:3190
Kameyama T, Sakanaka K, Motoe A, Tsunoda T, Nakanaga T, Wakayama NI, Takeo H, Fukuda K (1990) J Mater Sci 25:1058
Guo JY, Gitzhofer F, Boulos MI (1995) J Mater Sci 30:5589
Kong P, Pfender E (1987) Langmuir 3:259
Lee HJ, Eguchi K, Yoshida T (1990) J Am Ceram Soc 73:3356
Leparoux M, Schreuders C, Shin JW, Siegmann S (2005) Adv Eng Mater 7:349
Shin JW, Miyazoe H, Leparoux M, Siegmann S, Dorier JL, Hollenstein C (2006) Plasma Sources Sci Technol 15:441
Nakashima S, Harima H (1997) Phys Stat Sol A 162:39
Burton JC, Sun L, Long FH, Feng ZC, Ferguson T (1999) Phys Rev B 59:7282
Papoular R, Cauchetier M, Begin S, Le Caer G (1998) Astron Astrophys 329:1035
Boulos MH, Fauchais P, Pfender E (1994) In: Thermal plasmas—fundamentals and applications. Plenum Press editors
Colder H, Rizk R, Morales M, Marie P, Vicens J, Vickridge I (2005) J Appl Phys 98:024313
Acknowledgements
The authors thank C. Schreuders, G. Bürki, and M. Aeberhard (EMPA Thun) for modelling, SEM observations, and XRD characterizations respectively, W. Graehlert (FhG-IWS, Dresden) for Raman spectroscopy, J. Glory and A. Habert (LFP Saclay) for PCS and BET measurements respectively, O. Syrdal (Saint-Gobain) for the SiC microscale powder.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Leconte, Y., Leparoux, M., Portier, X. et al. Controlled Synthesis of β-SiC Nanopowders with Variable Stoichiometry Using Inductively Coupled Plasma. Plasma Chem Plasma Process 28, 233–248 (2008). https://doi.org/10.1007/s11090-007-9072-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11090-007-9072-4