Abstract
A Fibonacci hyperbolic model for the confining potential profile of finite-depth semiconductor quantum wells is proposed. Spatial dependence of electron effective mass is explicitly taken into account from the analysis of compositional variation of conduction band offset. For illustration, type I GaAs–Al\(_x\)Ga\(_{1-x}\)As quantum well structure is chosen. A close correlation between potential well and effective mass space functional expressions is demonstrated. Allowed electronic states are numerically determined via finite element method. For potential well width values of interest, the structure becomes a truly two-level system for confined electrons. Thus, under strong probe field conditions, nonlinear optical response due to inter-level transitions can be studied via Paspalakis–Boviatsis–Baskoutas approach.
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M. E. Mora-Ramos acknowledges support from Mexican SEP-Conacyt through Grant A1-S-8218.
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FBB wrote computing codes and performed numerical calculations. FU an IPQ processed results and prepared figures. MEMR wrote codes, processed results and wrote the manuscript text. CAD wrote the manuscript text. All authors reviewed the manuscript.
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Barreto-Basave, F., Mora-Ramos, M.E., Ungan, F. et al. Fibonacci hyperbolic quantum wells: a model for two-level non-linear optical response. Opt Quant Electron 55, 87 (2023). https://doi.org/10.1007/s11082-022-04370-8
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DOI: https://doi.org/10.1007/s11082-022-04370-8