Abstract
Intermediate band solar cells (IBSCs) hold the promise of power conversion efficiency (PCE) as high as that of the triple junction solar cells but with a simple single semiconductor junction. The absorption of photons with energy less than the band gap energy is guaranteed through the intermediate absorption process, hence the generation rate of carriers increases leading to enhancement of photo-generated current and efficiency of the solar cell. In this paper, we discuss the effect of using pyramid front surface grating as one of the light trap** techniques on the performance of InAs/GaAs (QD-IBSCs). A 3-D Finite Element Method (FEM) solver has been employed to simulate the proposed solar cell structure and to obtain its optical and electrical properties, and then we compared the results to those of IBSCs with planar front surface. Results show that maximum efficiency of the proposed model of IBSC with frontal surface grating is 58.15% with short circuit current density of 49.03 mA/ cm2 while the efficiency of flat surface IBSC is 46.81%, meaning that the power conversion efficiency has been improved by \(11.34\% ~\) in case of pyramid surface grated cell. The maximum value of output power observed in pyramid grated surface IBSC is 58.15 mW/cm2 with about 11.28 mW/cm 2 higher than its value for the flat surface one.
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Elewa, S., Yousif, B. & Abo-Elsoud, M.E.A. Efficiency enhancement of intermediate band solar cell using front surface pyramid grating. Opt Quant Electron 53, 360 (2021). https://doi.org/10.1007/s11082-021-03007-6
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DOI: https://doi.org/10.1007/s11082-021-03007-6