Abstract
The capacitance of the photodiode still remains some ignored issues. It will facilitate the further analysis and simulation of the capacitance of photodiodes to analyze on the capacitance of the p–i–n InAlAs/InGaAs/InAlAs infrared photodiode. In this paper, the capacitance is divided into two parts, diffusion capacitance and depletion capacitance, to discuss with models in which we solve the divergence of depletion capacitance(CT) at forward bias and take the deep level traps into consideration. Furthermore, we explore the dependence with the delay factor by the calculation of capacitance–voltage (C–V) characteristics. It shows that the delay factor is related to the applied voltage and the frequency.
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This project is supported by the National Natural Science Foundation of China (61774108).
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Yang, B., Chen, J. The analysis of the capacitance of p-InAlAs/i-InGaAs/n-InAlAs infrared photodetector. Opt Quant Electron 53, 275 (2021). https://doi.org/10.1007/s11082-021-02919-7
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DOI: https://doi.org/10.1007/s11082-021-02919-7