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Sol–gel processed Cu2ZnSnS4 thin films for a photovoltaic absorber layer without sulfurization

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Abstract

Sol–gel processed Cu2ZnSnS4 (CZTS) thin films were fabricated without sulfurization for application as a photovoltaic absorber layer. The precursor solution was made from CuCl2, Zn(ac)2, SnCl2, thiourea, and 2-methoxyethanol and the spin-coated film was annealed at temperature above 500 °C under a N2 atmosphere. A homogeneous and compositionally uniform film with single CZTS phase was obtained. Film composition featuring larger grains, which is desirable in photovoltaic cells, was obtained with heat treatment at 540 °C. The grain size was up to 1 μm and the Cu/(Zn + Sn) and Zn/Sn ratios were 0.93 and 1.07, respectively and the band gap energy was 1.56 eV.

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Acknowledgment

This research is financially supported by the Ministry of Knowledge Economy (MKE) and Korea Institute for Advancement in Technology (KIAT) through the Workforce Development Program in Strategic Technology.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Laboratory of Optical Materials and Coating (LOMC), Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305-701, Korea

    Hyung** Park, Young Hwan Hwang & Byeong-Soo Bae

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  1. Hyung** Park
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  2. Young Hwan Hwang
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  3. Byeong-Soo Bae
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Correspondence to Byeong-Soo Bae.

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Park, H., Hwang, Y.H. & Bae, BS. Sol–gel processed Cu2ZnSnS4 thin films for a photovoltaic absorber layer without sulfurization. J Sol-Gel Sci Technol 65, 23–27 (2013). https://doi.org/10.1007/s10971-012-2703-0

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  • DOI: https://doi.org/10.1007/s10971-012-2703-0

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