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Fabrication of ultra-low antireflection SiNWs arrays from mc-Si using one step MACE

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Abstract

In this work, SiNWs arrays were fabricated from mc-Si wafer using one step nano-silver catalyzed chemical etching method. The effect of AgNO3 concentration on morphology structure, antireflection property and effective carrier lifetime of textured mc-Si were carefully studied. The results indicate that the length and inter spacing of SiNWs arrays are conducive for improving antireflection property of SiNWs arrays, but the increasing etching seriously deteriorates effective carrier lifetime. Moreover, KOH correction of SiNWs was performed to further reduce the reflectance loss, which is also conducive to reduce the photo-generated carrier recombination. Under preference immersion time of 240 s, a large scale SiNWs arrays with the ultra-low antireflection ability of ~3.4% and excellent effective carrier lifetime of 3.30 μs can be obtained, which shows a great significance for producing high-efficiency polysilicon solar cells.

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Acknowledgements

Financial support of this work from the National Natural Science Foundation of China (Grant No. 51504117).

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Authors and Affiliations

  1. State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, 650093, China

    Cong Zhang, Shaoyuan Li, Wenhui Ma & Jia Yang

  2. National Engineering Laboratory for Vacuum Metallurgy/Silicon Metallurgy and Silicon Material Engineering Research Center of Universities in Yunnan Province, Kunming University of Science and Technology, Kunming, 650093, China

    Cong Zhang, Shaoyuan Li, Wenhui Ma, **aohan Wan, Jia Yang, Zhengjie Chen, Yuxin Zou & Jiajia Qiu

  3. Department of Mechanical, Materials and Aerospace Engineering, Illinois Institute of Technology, Chicago, 60616, USA

    Zhao Ding

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  1. Cong Zhang
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Correspondence to Shaoyuan Li or Wenhui Ma.

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Zhang, C., Li, S., Ma, W. et al. Fabrication of ultra-low antireflection SiNWs arrays from mc-Si using one step MACE. J Mater Sci: Mater Electron 28, 8510–8518 (2017). https://doi.org/10.1007/s10854-017-6573-7

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  • DOI: https://doi.org/10.1007/s10854-017-6573-7

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