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Band alignments of O3-based and H2O-based amorphous LaAlO3 films on silicon by atomic layer deposition

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Abstract

Amorphous LaAlO3 films were grown on p-type Si substrate by atomic layer deposition using O3 and H2O as the oxygen source, respectively. Band alignments of LaAlO3 films were analyzed by X-ray photoelectron spectroscopy measurements using the photoemission-based method. Extra hydroxyl groups and C and N-related impurities were detected in the H2O-based LaAlO3 film. As a result, the O3-based LaAlO3 dielectric gains higher band gap and band offsets than those of the H2O-based dielectric. Consequently, for the O3-based film, the leakage current of more than one order of magnitude less than that of H2O-based LaAlO3 film was obtained. All the results indicate that O3 is a more appropriate oxidant for the deposition of LaAlO3 dielectric.

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Acknowledgments

This research is supported by the National Natural Science Foundation of China (Grant Nos. 61376099 and 61434007) and the Foundation for Fundamental Research of China (Grant No. JSZL2016110B003).

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Authors and Affiliations

  1. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, **dian University, **’an, 710071, China

    Lu Zhao, Hongxia Liu, **ng Wang, **ngyao Feng & Chenxi Fei

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  1. Lu Zhao
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  2. Hongxia Liu
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  3. **ng Wang
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Correspondence to Hongxia Liu.

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Zhao, L., Liu, H., Wang, X. et al. Band alignments of O3-based and H2O-based amorphous LaAlO3 films on silicon by atomic layer deposition. J Mater Sci: Mater Electron 28, 803–807 (2017). https://doi.org/10.1007/s10854-016-5593-z

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  • DOI: https://doi.org/10.1007/s10854-016-5593-z

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