Abstract
The rising conventional energy prices have opened up the market for photovoltaic, but the lack of polycrystalline silicon from the chemical route restricts the growth of crystalline silicon solar cells. Recently there is a trend that produces solar cells by using the newly developed solar grade silicon feedstock from a metallurgical process route. In this article, the chemical components of solar grade silicon feedstock are analyzed. The single crystalline silicon solar cells from 100% solar grade silicon feedstock from a metallurgical process route are investigated. The outdoor performance of solar modules encapsulated by such cells is reported. The experimental evidence suggests that such solar cells can achieve the average efficiency higher than 14% on single crystalline silicon wafers. However, the efficiency degradation of solar cells under natural sunlight is significant, and the electrical uniformity of small cells diced from the whole cell is too bad. The metal impurities, oxygen, carbon, and their complexes influence the performance stabilization. The article proves that the module made by such cells has a big cell mismatch loss than normal cells made by electronic grade silicon, even if these cells come from the same sort. And the operating temperature of the cells of the modules is 15–22 °C higher than normal modules under the same conditions. The solar grade silicon feedstock from a metallurgical process route has to be improved farther in order to be used in photovoltaic industry.
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Acknowledgements
The authors wish to express their gratitude to Solarfun Power Holdings Co., Ltd., and Zhejiang ERA Solar Energy Technology Co., Ltd., for their helps. This study was supported by the fund of Applied Materials Co., of USA under the Project no. XA-AM-200901.
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Yang, H., Wang, H. The materials characteristic and the efficiency degradation of solar cells from solar grade silicon from a metallurgical process route. J Mater Sci 46, 1044–1048 (2011). https://doi.org/10.1007/s10853-010-4870-0
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DOI: https://doi.org/10.1007/s10853-010-4870-0