Abstract
The effect of chelating agents of ZnO precursor solutions on crystallization behavior was investigated. Two different additives, monoethanolamine (MEA) and diethanolamine (DEA), and crystalline Pt (111)/Si and amorphous SiNx/Si substrates, were used for this study. ZnO film grown on SiNx/Si from a DEA-chelated precursor solution shows a poorly oriented microstructure with weak crystallization peaks, while ZnO film grown on Pt(111)/Si shows a c-axis preferred orientation. In the case of ZnO films prepared with a MEA-chelated precursor solution, all films show a strong preferred orientation irrespective of substrate type. This result clearly demonstrates the role of the chelating agent on the crystallographic orientation and crystallization behavior of sol-gel processed ZnO films.
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Acknowledgements
This work was partially supported by USDA-CSREES (2006-34394-16953), the National Science Foundation (DMR-0605270), and the US Federal Aviation Administration (FAA) Office of Aerospace Medicine through the Air Transportation Center of Excellence for Airliner Cabin Environment Research (ACER). Although the FAA has sponsored parts of this project, it neither endorses nor rejects the findings of this research.
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Yoon, S.H., Liu, D., Shen, D. et al. Effect of chelating agents on the preferred orientation of ZnO films by sol-gel process. J Mater Sci 43, 6177–6181 (2008). https://doi.org/10.1007/s10853-008-2929-y
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DOI: https://doi.org/10.1007/s10853-008-2929-y