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Characteristics of nanostructure and electrical properties of Ti thin films as a function of substrate temperature and film thickness

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Abstract

Titanium films of different thickness at different substrate temperatures are prepared using PVD method. The nanostructure of these films was obtained using X-ray diffraction (XRD) and AFM, while the thicknesses were measured by means of Rutherford back scattering (RBS) technique. Resistivity, Hall coefficient, concentration of carriers and the mobility in these films are obtained. The results show that, the rutile phase of TiO2 is formed which is initially amorphous and as the film thickness increases it tends to become textured in (020) direction, which is more pronounced at higher temperatures and possibly transforms to anatase TiO2 with (112) orientation for thickest films of 224 nm. The conductivity and concentration of carriers increase with thickness, while the Hall coefficient and the mobility decrease. The activation energies in these samples were obtained from the Arrhenius plots of σ and R H. For thinner films ( \( E_{\hbox{a}} \approx 0.4 - 0.6 \) eV) and for thickest film (224 nm) a break point is observed at about 500 K, which is consistent with the idea of more processes becoming activated at higher temperatures.

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Acknowledgements

This work was carried out with the support of the University of Tehran and the Plasma Physics Research Centre, Science and Research Campus of I. A. University. We would like to thank the staff at the Nuclear Physics Research Centre of the Atomic Energy Authority of Iran, for their help with the RBS measurements. We are grateful to Ms. M. Shariati of Plasma Physics Research Centre, for AFM measurements.

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Authors and Affiliations

  1. Department of Physics, University of Tehran, North-Kargar St., Tehran, Iran

    H. Savaloni & M. S. Alaee

  2. Plasma Physics Research Center, Science and Research Campus of Islamic Azad. University, P. O. Box 14665-678, Tehran, Iran

    H. Savaloni & K. Khojier

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  1. H. Savaloni
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  2. K. Khojier
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  3. M. S. Alaee
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Correspondence to H. Savaloni.

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Savaloni, H., Khojier, K. & Alaee, M.S. Characteristics of nanostructure and electrical properties of Ti thin films as a function of substrate temperature and film thickness . J Mater Sci 42, 2603–2611 (2007). https://doi.org/10.1007/s10853-006-1340-9

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  • DOI: https://doi.org/10.1007/s10853-006-1340-9

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