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ZnO nanorod micropatterning via laser-induced forward transfer

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Abstract

We report a method for micropatterning (25–900 μm2 pixel size) of ZnO nanorods onto a silicon substrate via a low-temperature (overall under 100 °C) two-step process, involving a laser-based direct-write technique (laser-induced forward transfer) and sequential chemical growth. The rods produced via this route are aligned in the [0001] crystal direction. Photoluminescence shows, next to the band-gap emission, strong green-yellow emission centred at ∼570 nm. Additionally, the rod arrays show excellent field-emission properties with a threshold field for emission of 5 V/μm.

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Authors and Affiliations

  1. Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology – Hellas (FORTH), P.O. Box 1527, Heraklion, 71110, Crete, Greece

    A. Klini, A. Mourka, V. Dinca, C. Fotakis & F. Claeyssens

  2. Physics Department, University of Crete, Heraklion, 71409, Crete, Greece

    A. Mourka & C. Fotakis

  3. Lasers Department, ‘Optical Processing of Advanced Materials’ Group, National Institute for Lasers, Plasma and Radiation Physics (NILPRP), 409 Atomistilor Street, P.O. Box MG-16 Magurele, 077125, Bucharest, Romania

    V. Dinca

  4. School of Chemistry, University of Bristol, Bristol, BS8 1TS, UK

    F. Claeyssens

Authors
  1. A. Klini
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  2. A. Mourka
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  3. V. Dinca
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  4. C. Fotakis
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  5. F. Claeyssens
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Corresponding author

Correspondence to F. Claeyssens.

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PACS

61.82.Rx; 81.10.Dn; 81.16.Mk

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Klini, A., Mourka, A., Dinca, V. et al. ZnO nanorod micropatterning via laser-induced forward transfer. Appl. Phys. A 87, 17–22 (2007). https://doi.org/10.1007/s00339-006-3811-x

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  • DOI: https://doi.org/10.1007/s00339-006-3811-x

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