Abstract
Alternative technique for studying grain-boundary scattering phenomena in high-resistivity semiconducting films has been indicated. The combined effect of the presence of electric field and mechanical stress at the grain boundaries was considered. It is shown that the grain boundary potential, density of trap states, and carrier concentration of the films can be obtained by measuring reflectances of the films deposited on non-absorbing substrates.
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Pal, A.K. Grain-boundary scattering in semiconductor films. Bull. Mater. Sci. 17, 1251–1258 (1994). https://doi.org/10.1007/BF02747224
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DOI: https://doi.org/10.1007/BF02747224