Abstract
A general expression for the glide velocity of misfit dislocations in Si1-xGex layers on Si substrates as a function of composition, thickness and temperature is presented. The relaxation of Si/Si1-xGex/Si buried layer structures, which can proceed by the glide of two segment or three segment dislocations, is also considered. Expressions for the glide velocity of the two configurations are also given, allowing the behaviour of a Si/Si1-xGex/ Si structure to be predicted from the cap and alloy thicknesses and the alloy concentration. Use of this theory has enabled the design of structures that clearly demonstrate the different glide processes. Samples of MBE material designed in this way have been annealed at a range of temperatures. The dislocation configuration and glide velocity are as predicted by the theory.
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Tuppen, C.G., Gibbings, C.J. The kinetics of dislocation glide in SiGe alloy layers. J. Electron. Mater. 19, 1101–1106 (1990). https://doi.org/10.1007/BF02651988
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DOI: https://doi.org/10.1007/BF02651988