Log in

Thermal expansion coefficients of doped and undoped silica prepared by means of PCVD

  • Papers
  • Published:
Journal of Materials Science Aims and scope Submit manuscript

Abstract

The thermal expansion coefficient of silica prepared by means of low-pressure plasma-induced chemical vapour deposition has been investigated in the temperature range 20 to 750° C. Undoped, fluorine-doped (up to 5wt%), germanium-doped (up to 14 wt%), as well as F/GeO2-codoped samples were measured and compared to NBS standard silica samples. Fluorine-doped silica shows a lower thermal expansion coefficient than the NBS standard. A surprising hysteresis effect in the measured expansion curves was found. Its concentration dependence and annealing is discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. P. Geittner, D. Küppers andH. Lydtin,Appl. Phys. Lett. 18 (1976) 645.

    Google Scholar 

  2. P. Bachmann,Pure Appl. Chem. 57 (1985) 1299.

    Google Scholar 

  3. P. Bachmann, P. Geittner andH. Lydtin, “Technical Digest, Conference on Optical Fiber Communications” (Optical Society of America, Washington, D.C., 1986) paper WA1, p. 76.

    Google Scholar 

  4. P. Bachmann, H. Hübner, M. Lennartz, E. Steinbeck andJ. Ungelenk, 8th European Conference on Optical Communications, Cannes, France, Conference Proceedings (1982) p. 66.

  5. P. K. Bachmann, P. Geittner, D. Leers andH. Wilson,J. Lightwave Technol. LT-4 (1986) 813.

    Google Scholar 

  6. P. K. Bachmann, D. Leers, H. Wehr, D. U. Wiechert andJ. A. V. Steenwijk,ibid. LT-4 (1986) 858.

    Google Scholar 

  7. C. A. M. Mulder, R. K. Janssen, P. Bachmann andD. Leers,J. Non-Cryst. Solids 72 (1985) 242.

    Google Scholar 

  8. W. Hermann, A. Reith andH. Rau,Ber. Deut. Buns. Phys. Chem. (1986) submitted.

  9. P. K. Bachmann, W. Hermann, H. Wehr andD. U. Wiechert,Appl. Optics 25 (1986) 1093.

    Google Scholar 

  10. P. K. Bachmann, W. Hermann, H. Wehr andD. U. Wiechert,ibid. 26 (1987) 1175.

    Google Scholar 

  11. H. Wehr andD. U. Wiechert,Mater. Res. Bull. 21 (1986) 559.

    Google Scholar 

  12. Y. Y. Huang, A. Sarkar andP. C. Schultz,J. Non-Cryst. Solids 27 (1978) 29.

    Google Scholar 

  13. P. C. Schultz, 2nd International Otto-Schott-Colloquium in Jena, DDR, Conference Proceedings (1982) p. 12.

  14. I. D. Aggarwal andE. N. Randall, German Patent No. DE 26 32 689 C2 (1986).

  15. H. Takahashi, A. Oyobe, M. Kosuge andR. Setaka, 11th European Conference on Optical Communication, Barcelona, Spain, Technical Digest, 1 (1986) p. 3.

    Google Scholar 

  16. P. Bachmann, P. Geittner, D. Leers, M. Lennartz andH. Wilson,Electron. Lett. 20 (1984) 35.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Bachmann, P.K., Wiechert, D.U. & Meeuwsen, T.P.M. Thermal expansion coefficients of doped and undoped silica prepared by means of PCVD. J Mater Sci 23, 2584–2588 (1988). https://doi.org/10.1007/BF01111918

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01111918

Keywords

Navigation