Abstract
This paper presents a comparison between AlGaN/GaN high electron mobility transistor (HEMT) with and without AlN spacer layer between AlGaN and GaN interface. Two AlN layers are used in the proposed design, one AlN layer is used as an interfacial passivation layer between Al2O3 and AlGaN layer. 2DEG is formed at the interface of AlN and GaN. Spacer layer enhances the mobility of carrier in the channel. Due to higher mobility, current density and drain current of the spacer layer HEMT are larger than HEMT without spacer. The results with spacer-MIS-HEMT are compared with MIS-HEMT without spacer, which shows that the spacer-MIS-HEMT provides better ON–OFF current, transconductance, cutoff frequency (11 GHz), and ON to OFF current ratio is (1011).
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Ranjan R, Kashyap N, Raman A (February 2020) Appl Phy A
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Ranjan, R., Kashyap, N., Raman, A. (2020). Effect of AlN Spacer Layer on the Proposed MIS-AlGaN/GaN HEMT. In: Mallick, P.K., Meher, P., Majumder, A., Das, S.K. (eds) Electronic Systems and Intelligent Computing. Lecture Notes in Electrical Engineering, vol 686. Springer, Singapore. https://doi.org/10.1007/978-981-15-7031-5_106
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DOI: https://doi.org/10.1007/978-981-15-7031-5_106
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