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Deep impurities

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Festkörperprobleme 11

Part of the book series: Advances in Solid State Physics ((ASSP,volume 11))

Abstract

Tiefe Störstellen in Halbleitern werden in diesem allgemeinen Überblick behandelt. Die Theorie eines Wasserstoff-Modells mit effektiven Massen versagt völlig als Beschreibung der stark lokalisierten Löcher oder Elektronen an tiefen Zentren. Wannier-Funktionen oder die kürzlich beschriebene erfolgreiche LCAO-MO-Methode von Watkins und Messmer sind angemessener. Optische Absorptionsmessungen werden bei der Zusammenfassung der experimentellen Daten besonders behandelt; sie zeigen, daß eine Deltafunktion das bindence Potential des Zentrums sehr gut annähert. Die noch weitgehend unverstandenen Prozesse der strahlungslosen Rekombination hängen eng zusammen mit dem Verhalten tiefer Zentren.

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Author notes

  1. Hans-Joachim Queisser

    Present address: Max Planck-Institut für Festkörperforschung, Stuttgart 1, Germany

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  1. Physikalisches Institut Universität Frankfurt/M., Germany

    Hans-Joachim Queisser

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O. Madelung

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© 1971 Friedr. Vieweg + Sohn GmbH, Verlag

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Queisser, HJ. (1971). Deep impurities. In: Madelung, O. (eds) Festkörperprobleme 11. Advances in Solid State Physics, vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107682

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  • DOI: https://doi.org/10.1007/BFb0107682

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  • Print ISBN: 978-3-528-08017-4

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