Abstract
Modeling and simulation of nano-devices can be used to study and predict the performance of the nanoscale devices and play an increasingly important role in understanding the working mechanisms of devices and improving their performance. Since the MOSFET device size shrinks to nanoscale, the performance of nano-devices is increasingly affected by various quantum effects and nanoscale material properties. Quantum theoretical simulation methods based on quantum effects have been developed to research the new nano-devices. This chapter describes several modeling and simulation methods of nano-devices, including Monte Carlo simulation, nonequilibrium Green’s function (NEGF), molecular dynamics simulation, first principles method, density functional theory, and atomic device simulation. The basic principle of simulation methods and application potential are briefly introduced.
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Liu, F., Wang, Y., Zeng, L., Du, G., Liu, X. (2024). Modeling and Simulation of Nano-devices. In: Wang, Y., Chi, MH., Lou, J.JC., Chen, CZ. (eds) Handbook of Integrated Circuit Industry. Springer, Singapore. https://doi.org/10.1007/978-981-99-2836-1_86
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DOI: https://doi.org/10.1007/978-981-99-2836-1_86
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