Abstract
This paper proposes a highly reliable PMOS pass transistor-based radiation-tolerant 12T (PPTRT 12T) SRAM cell for deep-space applications. The proposed SRAM cell achieves 17.88% improvement in critical charge (QC), 2.19× improvement in read static noise margin (RSNM), and 1.24× improvement in read access time (TRA) as compared to QUCCE 10T SRAM cell at the expense of marginal (1.04×) degradation in write access time (TWA). The read operation of the proposed circuit is highly stable (read upset proof) because of its higher RSNM. It is also highly reliable in radiation environments because of its higher QC. The theoretical design of the proposed SRAM cell has been validated with extensive simulations on PrimeSim HSPICE using 16-nm high-performance CMOS technology.
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Yekula, R.T., Pandey, M., Islam, A. (2023). Highly Reliable PMOS Pass Transistor-Based Radiation Tolerant 12T SRAM Cell for Deep Space Applications. In: Biswas, A., Islam, A., Chaujar, R., Jaksic, O. (eds) Microelectronics, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 976. Springer, Singapore. https://doi.org/10.1007/978-981-99-0412-9_1
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DOI: https://doi.org/10.1007/978-981-99-0412-9_1
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