Zusammenfassung
Dieses Kapitel diskutiert die Anwendung von vertikalen Tunnel-FET (VTFET) als dielektrisch modulierter, markierungsfreier Biosensor. Es werden verschiedene Merkmale dieses Biosensors vorgestellt, wobei sich die Analysen auf die Steigerung der Empfindlichkeit, die untere Nachweisgrenze und die Reaktionszeit konzentrieren. Das Konzept der Sensorik basiert auf der dielektrischen Modulation, bei der die Inkubation der Biomoleküle durch einen Isolator dargestellt wird. Dessen Dielektrizitätskonstante entspricht der Dielektrizitätskonstante des Ziel-Biomoleküls, da verschiedene Biomoleküle eine einzigartige Dielektrizitätskonstante aufweisen. Das vorgeschlagene Sensordesign wird mit einem Ansatz des Technology-Computer-Aided-Designs (TCAD) umgesetzt, indem relevante physikbasierte Simulationsmodelle integriert werden. Mit Blick auf den praktischen Nutzen des Geräts wurde die Studie erweitert, um seine Leistung unter nichtidealen Bedingungen wie sterischer Behinderung oder unregelmäßiger Ausrichtung zu analysieren. Abschließend wird der Status des vorgeschlagenen Sensors durch den Vergleich verschiedener Sensorparameter einiger bedeutender, in der Literatur verfügbarer Arbeiten zum markierungsfreien Biosensor auf TFET-Basis dargestellt.
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Wangkheirakpam, V.D., Bhowmick, B., Pukhrambam, P.D. (2024). Dielektrisch modulierter Biosensor basierend auf vertikalem Tunnel-Feldeffekt-Transistor. In: Dutta, G., Biswas, A. (eds) Intelligente Nano-Bio-Geräte der nächsten Generation. Springer Spektrum, Singapore. https://doi.org/10.1007/978-981-97-2087-3_9
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