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On Few Electronic Properties of Nanowires of Heavily Doped Biosensing Materials

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Next Generation Smart Nano-Bio-Devices

Part of the book series: Smart Innovation, Systems and Technologies ((SIST,volume 322))

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Abstract

In this chapter, we study the effective electron mass (EEM), the Einstein relation for the diffusivity–mobility ratio (ER), the Einstein’s photoemission (EP), the field emission (FE) and the thermo-electric power (TP) in heavily doped nanowires (HDNWs) of different biosensing materials together with the relative comparison of the said transport features with that of the HDNW compounds. The EEM is an important transport quantity which is used in the analysis of different devices of low-dimensional electronics. The ER is useful in the characterizations of various types of hetero-structures and occupies a central position in the field of materials science. The EP is a physical phenomenon which finds extensive application in modern opto-electronics, and the FE is a quantum mechanical process. Besides, with the advent of quantum Hall effect, there has been considerable interest in studying the TP for various low-dimensional compounds. Although biosensing materials find wide applications and many physical properties have already been studied, nevertheless the investigations of the said electronic quantities for nanowires (NWs) of heavily doped (HD) biosensing materials are becoming increasingly important. Kee** this in mind in this chapter, an attempt is made to study the aforesaid quantities, talking HDNWs of various biosensing materials. We observe that the EEM is quantum number dependent. The ER oscillates with the electron statistics (n0) and the magnitude and nature of oscillations are totally different as compared with the ER in HDNWs of other materials talking HDNW of InSb as an example. The Einstein’s photo current from HDNWs of different biosensing materials also oscillates with n0 in radically different fashion as found from HDNWs of other materials. The field emitted current oscillates with increase in electric field due to van Hove singularities and the TP increases with increasing n0 in oscillatory ways. The most important realization is that the quantum signatures in all the cases are not only totally different, but also the variations of the said electronic quantities as compared with that of HDNWs different compounds excluding biomaterials are also different.

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Acknowledgements

The authors are grateful to Prof. Dr. S. Chakrabarti, Hon’ble President Sir of IEM UEM Group for his constant encouragement and inspiration.

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Authors and Affiliations

  1. Department of Computer Science and Engineering, University of Engineering and Management, Kolkata, 700156, India

    R. Paul & S. Chakrabarti

  2. Department of Electronic and Telecommunication Engineering, Indian Institute of Engineering Science and Technology, Shibpur, Howrah, 711103, India

    M. Mitra

  3. Department of Basic Science & Humanities, Institute of Engineering & Management, D-1, Management House, Salt Lake, Sector-V, Kolkata, West Bengal, 700091, India

    T. Dutta & K. P. Ghatak

  4. Department of Computer Science and Engineering, National Institute of Technology, Agartala, Tripura, 799055, India

    N. Debbarma & S. Debbarma

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Correspondence to K. P. Ghatak .

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  1. School of Medical Science and Technology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal, India

    Gorachand Dutta

  2. School of Mines and Metallurgy, Kazi Nazrul University, Asansol, West Bengal, India

    Arindam Biswas

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Paul, R. et al. (2023). On Few Electronic Properties of Nanowires of Heavily Doped Biosensing Materials. In: Dutta, G., Biswas, A. (eds) Next Generation Smart Nano-Bio-Devices. Smart Innovation, Systems and Technologies, vol 322. Springer, Singapore. https://doi.org/10.1007/978-981-19-7107-5_2

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  • DOI: https://doi.org/10.1007/978-981-19-7107-5_2

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