Development of Ni-Doped Zinc Oxide Films via Sol-Gel Synthesis

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Micro and Nanoelectronics Devices, Circuits and Systems

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 904))

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Abstract

The structural, optical, and magnetic characteristics of undoped and Ni-doped ZnO [Zn(1−x) NixO] films synthesised by the sol-gel technique were reported in this work. The films’ polycrystalline nature is confirmed by X-ray diffraction structural investigation. The intensity of the corresponding diffraction peak (101) increases with increasing Ni do** concentrations. The average crystallite size of the films ranges from 13 to 21 nm. The optical studies of ZnO film have shown a high transmittance (~80%) in the visible range with a large bandgap (Eg ~ 3.23 eV). The optical bandgap is initiated to be reducing (Eg ~ 1.75 eV) abruptly for the [Zn(1−x) NixO] film. The vibrating sample magnetometer analysis exhibit the diamagnetic properties of the film after Ni do**. The Ni-doped ZnO films seem to be a viable option for solar applications.

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Acknowledgements

This work is funded by DST / SERB (India) under grant number of ECR/2016/001937.

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Correspondence to Ram Narayan Chauhan .

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Parui, S.S., Kheraj, V., Tiwari, N., Chauhan, R.N. (2023). Development of Ni-Doped Zinc Oxide Films via Sol-Gel Synthesis. In: Lenka, T.R., Misra, D., Fu, L. (eds) Micro and Nanoelectronics Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 904. Springer, Singapore. https://doi.org/10.1007/978-981-19-2308-1_1

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  • DOI: https://doi.org/10.1007/978-981-19-2308-1_1

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  • Print ISBN: 978-981-19-2307-4

  • Online ISBN: 978-981-19-2308-1

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