Abstract
Radiation-hardened model silicon on insulator fin gate tunnel field effect transistor (SOI FinTFET) devices are used for spacecraft applications to protect from radiation effects. In this, radiation environment revealed that the radiation-induced effect degradation of device performance and also trap charge carriers should not be neglected. Enormous simulations were carried out to examine the production of electron and holes in the gate oxide and to predict the characteristics of device from sub-threshold to inversion region. The gamma radiation model of Sentaurus Technology Computer-Aided Design (TCAD) was used to determine the radiation properties of SOI FinTFET.
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Dharmireddy, A.K. et al. (2022). Rad-Hard Model SOI FinTFET for Spacecraft Application. In: Chakravarthy, V.V.S.S.S., Flores-Fuentes, W., Bhateja, V., Biswal, B. (eds) Advances in Micro-Electronics, Embedded Systems and IoT. Lecture Notes in Electrical Engineering, vol 838. Springer, Singapore. https://doi.org/10.1007/978-981-16-8550-7_12
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DOI: https://doi.org/10.1007/978-981-16-8550-7_12
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