Abstract
We propose theoretical modeling to interpret the experimental transmittance as a function of wavelength (λ) of amorphous or crystalline semiconductors and dielectric thin films for optoelectronic device applications. The presented model reproduces the values of effective single oscillator energy (E0) of the undoped and Ag-ZnO thin films that are in good agreement with other theoretical models. We found that effective single oscillator energy (E0) of Ag-ZnO has increased from 6.313 eV to 6.46 eV as do** concentration Ag in ZnO films is increased from 0 to 5%. Furthermore, we executed the newly derived model to reproduce other optical parameters.
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Sapkota, B.P., Das, S.K., Mukherjee, V., Kabi, S. (2022). Investigation of Optical Properties of Ag-Doped Zinc Oxide Thin Film Layer for Optoelectronic Device Applications. In: Dhar, S., Mukhopadhyay, S.C., Sur, S.N., Liu, CM. (eds) Advances in Communication, Devices and Networking. Lecture Notes in Electrical Engineering, vol 776. Springer, Singapore. https://doi.org/10.1007/978-981-16-2911-2_8
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DOI: https://doi.org/10.1007/978-981-16-2911-2_8
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