Abstract
Negative electron affinity (NEA) of diamond as a property inherent in the material is known for a time [1]. Quite recently, the property has attracted a strong interest for applications in vacuum microelectronics and in other fields of modern science and technology [2]. Tentative applications in field-emission displays (FED) is probably one of the most popular.
Diamond particles with sizes in the micrometer range were deposited onto sharpened Si tips. A marked tendency for deposition of the particles on very end of the tips was observed. Field emission studies of the tips with the particles have shown that the emitters have a decreased work function.
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© 1995 Springer Science+Business Media Dordrecht
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Givargizov, E.I. et al. (1995). Diamond Particles on Silicon Tips: Preparation, Structure, and Field Emission Properties. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_5
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DOI: https://doi.org/10.1007/978-94-011-0173-8_5
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