Abstract
Diffusion of boron, hydrogen, oxygen and lithium in single crystalline and polycrystalline diamond is reported. Diffusion under DC electric field was used to enhance the diffusion rate. SIMS analyses were used to determine the impurity concentration. A novel method is proposed for the determination of the state of an impurity (donor, acceptor or deep level) in a semiconductor lattice. To demonstrate the method boron was diffused into Ia type natural diamond under a DC electric field. The concentration and diffusion profiles of boron were affected by the applied field. Boron diffuses as a negative ion since it is an acceptor shallow enough to be partially ionized at the temperature of diffusion. The drift velocity of boron ions at the temperature of diffusion was also estimated. Diffusion under DC electric field of lithium, oxygen and fluorine in high quality diamond films was also studied.
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Popovici, G., Sung, T., Prelas, M.A., Wilson, R.G., Khasawinah, S. (1995). Diffusion of Boron, Hydrogen, Oxygen and Lithium in Single Crystalline and Polycrystalline Diamond. A Novel Method for the Determination of the State of an Impurity: Forced Diffusion of Boron in IA Type Natural Diamond. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_2
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