Abstract
A new three-dimensional Monte Carlo simulator has been developed based on UT-MARLOWE. Unbalanced Octree algorithm was used for spatial decomposition. A new trajectory replication scheme was developed and implemented to enhance computational efficiency. More than two orders of magnitude savings on CPU time have been achieved.
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References
B. Obradovic, etc, IEDM 1998 Technical Digest, 513.
G. F. Carey, etc. “Computer Simulation of Semiconductor Processes and Devices-- Mathematical and Numerical Aspects”, John Wiley and Sons, 1996.
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© 2001 Springer-Verlag Wien
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Li, D. et al. (2001). A Computationally Efficient Model for Three-dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_75
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_75
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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