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Molecular Beam Epitaxy

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Epitaxy

Part of the book series: Springer Series in MATERIALS SCIENCE ((SSMATERIALS,volume 62))

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Abstract

MBE is a versatile technique for growing thin epitaxial structures made of semiconductors, metals or insulators [7.1] (see also the definition given in Sect. 6.1.3). What distinguishes MBE from previous vacuum deposition techniques is its significantly more precise control of the beam fluxes and growth conditions. Because of vacuum deposition, MBE is carried out under conditions far from thermodynamic equilibrium and is governed mainly by the kinetics of the surface processes occurring when the im**ing beams react with the outermost atomic layers of the substrate crystal. This is in contrast to other epitaxial growth techniques, such as LPE or atmospheric pressure VPE, which proceed at conditions near thermodynamic equilibrium and are most frequently controlled by diffusion processes occurring in the crystallizing phase surrounding the substrate crystal.

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Authors and Affiliations

  1. Wissenschaftliches Zentrum, Polnischen Akademie der Wissenschaften, Boerhaavengasse 25, 1030, Wien, Austria

    Professor Dr. Marian A. Herman

  2. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623, Berlin, Germany

    Professor Dr. Wolfgang Richter

  3. INFM, Dipartimento di Fisica, Università di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133, Roma, Italy

    Professor Dr. Wolfgang Richter

  4. Johannes-Kepler-Universität, Altenbergerstr. 69, 4040, Linz, Austria

    Professor Dr. Helmut Sitter

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  3. Professor Dr. Helmut Sitter
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Herman, M.A., Richter, W., Sitter, H. (2004). Molecular Beam Epitaxy. In: Epitaxy. Springer Series in MATERIALS SCIENCE, vol 62. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-07064-2_7

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