Abstract
Compared to MOS devices, bipolar transistors have high switching speeds well into the 100 GHz range in conjunction with large transconductances and, thus, excellent driver characteristics. However, the area requirement of these circuit elements is very high compared to the MOS structures due to the needed insulations—at least in the SBC (“standard buried collector”) techniques. Diffusion and oxide insulation are discussed, and the self-aligned bipolar transistor integration is presented.
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Hilleringmann, U. (2023). Bipolar Technology. In: Silicon Semiconductor Technology. Springer Vieweg, Wiesbaden. https://doi.org/10.1007/978-3-658-41041-4_12
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DOI: https://doi.org/10.1007/978-3-658-41041-4_12
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