The Frequency-Dependent Deformation of the Hall Plateaus

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High Magnetic Fields in Semiconductor Physics III

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 101))

Abstract

We calculate the Hall conductivity in the low frequency limit for a 2d model of independent electrons in the tails of the density of states between the disorder broadened Landau levels. It is shown that there are corrections to the quantized values of σ yx which are proportional to ω2 and to the number of localized states in a given tail of the band. We relate our theoretical results to microwave experiments on GaAs-AlGaAs heterostructures.

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References

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© 1992 Springer-Verlag Berlin Heidelberg

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Viehweger, O., Efetov, K.B. (1992). The Frequency-Dependent Deformation of the Hall Plateaus. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics III. Springer Series in Solid-State Sciences, vol 101. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84408-9_11

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  • DOI: https://doi.org/10.1007/978-3-642-84408-9_11

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84410-2

  • Online ISBN: 978-3-642-84408-9

  • eBook Packages: Springer Book Archive

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