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Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

Part of the book series: SpringerBriefs in Molecular Science ((BRIEFSMOLECULAR))

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Abstract

It was the quantum confinement effect and photoluminescence that inspired the intensive researches in the research field of growth and properties of silicon nanostructures. A large volume of researches have been directed to experimental syntheses and characterizations of the various silicon nanostructures including zero-dimensional quantum dots and one-dimensional nanowires. Computational predictions of novel structures of pristine silicon nanostructures including silicon nanotubes have also been intensive. Distinguishing computational work has been done by us on the growth mechanism, surface properties, excited state properties, and energy band engineering of silicon nanostructures. Our studies are expected to promote the development of silicon-based nanoscience and nanotechnology.

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Authors and Affiliations

  1. Department of Physics and Material Science, City University of Hong Kong, Hong Kong SAR, People’s Republic of China

    Rui-Qin Zhang

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  1. Rui-Qin Zhang
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Correspondence to Rui-Qin Zhang .

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Zhang, RQ. (2014). Introduction. In: Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations. SpringerBriefs in Molecular Science. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-40905-9_1

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