Characterization and modelling of semiconductor quantum nanostructures grown by droplet epitaxy

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EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany

Abstract

One of the main requirements for the development of quantum computing is the ability of manufacturing single photon emitters. Self assembled semiconductor nanostructures are ones of the most reliable candidates for this application, once control of size and spatial location is achieved. The droplet epitaxy technique allows growth of low density distributions of nanostructures with good optical quality, constituting a promising method for single photon devices and quantum applications [1].

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References

  1. P. Alonso-Gonzalez, B. Alen, D. Fuster, Y. Gonzalez and L. Gonzalez, Appl. Phys. Lett. 91 (2007) 163104.

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  2. This work has been supported by MEC (TEC2005-05781-C03-01 and 02/MIC), SANDiE and ESTEEM European networks (Contracts NMP4-CT-2004-500101 and 026019 ESTEEM), and Junta de AndalucÍa (PAI research group TEP-120).

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Sales, D.L. et al. (2008). Characterization and modelling of semiconductor quantum nanostructures grown by droplet epitaxy. In: Richter, S., Schwedt, A. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85226-1_46

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