Abstract
This chapter explains how heterogeneous junction bipolar transistors(transconductance resistor) work. These semiconductor devices are replacing homogeneous junction bipolar transistors, because they can conduct ultra high frequency signals(RF and microwave) and switch on–off high current|voltage(10 s of Amperes and 100 s of Volts). The focus is on understanding the reason behind their ultra high frequency and power performance characteristics.
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Banerjee, A. (2024). Basic Heterogeneous Bipolar|Bijunction Transistor (HBT) Properties. In: Semiconductor Devices. Synthesis Lectures on Engineering, Science, and Technology. Springer, Cham. https://doi.org/10.1007/978-3-031-45750-0_4
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DOI: https://doi.org/10.1007/978-3-031-45750-0_4
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