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Influence of Titanium Nitride Thin Films on the Electrical Properties of Isotype n-TiN/n-Si Heterostructures

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Nanomaterials and Nanocomposites, Nanostructure Surfaces, and Their Applications

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 279))

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Abstract

The conditions for the formation of the energy barrier in isotypic n-TiN/n-Si heterojunctions by the reactive magnetron sputtering method of thin films of titanium nitride on n-Si crystalline substrates have been studied. Based on the analysis of C-V-characteristics, the role of states localized at the n-TiN/n-Si boundary in the formation of the energy barrier is clarified and its parameters are determined. A model of the energy diagram of the n-TiN/n-Si heterojunction, which well describes the experimental electrophysical phenomena, is proposed. The mechanisms of electron motion through the energy barrier of the heterojunction at forward and reverse biases are analyzed according to the temperature dependences of the I-V characteristics.

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Authors and Affiliations

  1. Department of Electronics and Power Engineering, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, 58002, Ukraine

    I. G. Orletskyi, M. I. Ilashchuk, I. P. Koziarskyi, M. M. Solovan, D. P. Koziarskyi, E. V. Maistruk & O. A. Parfenyuk

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  1. I. G. Orletskyi
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  2. M. I. Ilashchuk
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  3. I. P. Koziarskyi
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  4. M. M. Solovan
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  5. D. P. Koziarskyi
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  6. E. V. Maistruk
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  7. O. A. Parfenyuk
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Corresponding author

Correspondence to I. P. Koziarskyi .

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Editors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine

    Olena Fesenko

  2. Institute of Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine

    Leonid Yatsenko

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Orletskyi, I.G. et al. (2023). Influence of Titanium Nitride Thin Films on the Electrical Properties of Isotype n-TiN/n-Si Heterostructures. In: Fesenko, O., Yatsenko, L. (eds) Nanomaterials and Nanocomposites, Nanostructure Surfaces, and Their Applications . Springer Proceedings in Physics, vol 279. Springer, Cham. https://doi.org/10.1007/978-3-031-18096-5_32

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