Abstract
The bipolar junction transistor or binary junction transistor (BJT) is a device that is capable of amplifying a voltage or current, something that diodes are not able to do. This amplifying characteristic makes BJT suitable for a wide range of applications. The device was invented in 1947 by Walter H. Brattain, John Bardeen, and William Shockley who were awarded the Nobel Prize in Physics in 1956 for this invention. It revolutionized the electronics industry by enabling the miniaturization of electronic circuits and increased equipment portability. This chapter discusses the characteristics of BJT and its use in elementary amplifier circuits. At the end of it, the student will be able to:
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Gift, S.J.G., Maundy, B. (2022). Bipolar Junction Transistor. In: Electronic Circuit Design and Application. Springer, Cham. https://doi.org/10.1007/978-3-030-79375-3_2
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DOI: https://doi.org/10.1007/978-3-030-79375-3_2
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