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Non-MAX Phase Precursors for MXenes

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2D Metal Carbides and Nitrides (MXenes)

Abstract

MXenes, as the new family of two-dimensional materials, have attracted extensive attention due to their widespread potential applications. To enrich the MXene family becomes an important research goal in recent years. Generally, MXenes are fabricated from selective etching of the Al-containing MAX phases. Here, in contrast to the traditional approach, the syntheses of MXenes by selective etching of non-MAX precursors are summarized in this chapter. In addition, the existing non-MAX layered carbides (MC)n[Al(A)]mCm−1 (n is generally 2~4, m is 3 or 4, A is Si and/or Ge) possible for MXene precursors are reviewed. Specially, Zr3C2Tx is firstly synthesized by selective etching of Zr3Al3C5, where an Al3C3 unit instead of an Al atomic layer is etched out. The obtained configuration shows relatively high thermal stability with its structure is stable even under 1200 °C. Hf3C2Tx is further synthesized from selective etching of a solid solution Hf3(Al,Si)4C6. Si is determined to weaken the layer adhesion and facilitate the etching process. Additionally, with a mild organic base as etchant, a semiconducting MXene member ScCxOH is realized by selective etching of ScAl3C3. Different from the Al-containing layered carbides, the Mo2Ga2C phase wherein two Ga layers stacked between Mo2C layers is also adopted for the synthesis of Mo2CTx. Both Hf3C2Tx and Mo2CTx are found to show promising applications in energy storage. For instance, the volumetric capacity for Hf3C2Tx is measured as high as 1567 mAh cm−3 for lithium-ion batteries at a current density of 200 mA g−1 after 200 cycles. Based on these non-MAX precursors, we look forward to more promising MXene configurations that could be realized in the near future.

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  1. ** University, IFM, Linkö**, Sweden

    Per Eklund

Authors
  1. **an-Hu Zha
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  2. Jie Zhou
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  3. Per Eklund
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  4. **ao**g Bai
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  5. Shiyu Du
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  6. Qing Huang
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Correspondence to Shiyu Du or Qing Huang .

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Editors and Affiliations

  1. Department of Mechanical and Energy Engineering, Purdue School of Engineering and Technology, Indiana University-Purdue University, Indianapolis (IUPUI), Indianapolis, IN, USA

    Babak Anasori

  2. Department of Materials Science and Engineering and A.J. Drexel Nanomaterials Institute, Drexel University, Philadelphia, PA, USA

    Yury Gogotsi

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Zha, XH., Zhou, J., Eklund, P., Bai, X., Du, S., Huang, Q. (2019). Non-MAX Phase Precursors for MXenes. In: Anasori, B., Gogotsi, Y. (eds) 2D Metal Carbides and Nitrides (MXenes). Springer, Cham. https://doi.org/10.1007/978-3-030-19026-2_4

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