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Magnetophonon Resonance Recombination of Heated Electron and Hole Due to Two TA-Phonon Emission in LPE-HgTe

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Proceedings of the 17th International Conference on the Physics of Semiconductors

Abstract

Longitudinal magnetoresistance of LPE-HgTe was investigated at 4.2K under heated electron condition by using a second derivative method. Oscillation with 3~5 peaks was observed in 2~9T under electric field of around 1V/cm. These peaks are interpreted as due to the magnetophonon resonance recombination of heated electron and hole accompanied by two TA-phonon emission. It is deduced for the first time that at low temperatures TA-phonon density of states has two peaks at 2.6meV and 3.1meV.

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References

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Author information

Authors and Affiliations

  1. Institute of Materials Science, University of Tsukuba, Ibaraki, 305, Japan

    K. Takita, T. Ippōshi, H. Otake & K. Masuda

Authors
  1. K. Takita
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  2. T. Ippōshi
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  3. H. Otake
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  4. K. Masuda
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Editor information

Editors and Affiliations

  1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, 94340, Palo Alto, CA, USA

    James D. Chadi

  2. Department of Applied Physics W.W. Hansen Laboratories, Stanford University, 94305, Stanford, CA, USA

    Walter A. Harrison

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© 1985 Springer Science+Business Media New York

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Takita, K., Ippōshi, T., Otake, H., Masuda, K. (1985). Magnetophonon Resonance Recombination of Heated Electron and Hole Due to Two TA-Phonon Emission in LPE-HgTe. In: Chadi, J.D., Harrison, W.A. (eds) Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7682-2_268

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  • DOI: https://doi.org/10.1007/978-1-4615-7682-2_268

  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4615-7684-6

  • Online ISBN: 978-1-4615-7682-2

  • eBook Packages: Springer Book Archive

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