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Atomic Geometry and Dynamics of the InAs(110) Surface

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Proceedings of the 17th International Conference on the Physics of Semiconductors

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Abstract

The structure of the relaxed InAs (110) surface has been determined by massresolved Rutherford backscattering of He+ ions. Measurements of ion blocking angles identify the relaxation as a bond-length conserving rotation of the In-As surface bond by an angle of ω = 29° +5°−4° out of the surface plane. The r.m.s. vibration amplitudes of surface atoms are enhanced by a factor 1.6 with respect to the bulk values.

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References

  1. C.B. Duke, S.L. Richardson and A. Paton, Surf.Sci. 127, L135 (1983) and references therein.

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  2. H.-J. Gossmann and W.M. Gibson, Surf.Sci. 139, 239 (1984).

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  3. C.B. Duke, A. Paton, A. Kahn and C.R. Banapace, Phys.Rev. B 27, 6189 (1983).

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  4. L. Smit, R.M. Tromp and J.F. van der Veen, Phys.Rev. B 29, 4814 (1984).

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Author information

Authors and Affiliations

  1. FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ, Amsterdam, The Netherlands

    L. Smit & J. F. van der Veen

Authors
  1. L. Smit
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  2. J. F. van der Veen
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Editor information

Editors and Affiliations

  1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, 94340, Palo Alto, CA, USA

    James D. Chadi

  2. Department of Applied Physics W.W. Hansen Laboratories, Stanford University, 94305, Stanford, CA, USA

    Walter A. Harrison

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© 1985 Springer Science+Business Media New York

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Smit, L., van der Veen, J.F. (1985). Atomic Geometry and Dynamics of the InAs(110) Surface. In: Chadi, J.D., Harrison, W.A. (eds) Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7682-2_17

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  • DOI: https://doi.org/10.1007/978-1-4615-7682-2_17

  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4615-7684-6

  • Online ISBN: 978-1-4615-7682-2

  • eBook Packages: Springer Book Archive

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