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Structural and Compositional Properties of Strain-Symmetrized SiGe/Si Heterostructures

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Microscopy of Semiconducting Materials 2007

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 120))

Summary

In this study, we have utilised conventional and aberration corrected (scanning) transmission electron microscopy to examine the Ge concentration across a series of technologically significant SiGe/Si prototype heterostructures. Electron energy loss line profiles show that the Ge concentration within the SiGe quantum wells approaches the nominal values. However, the Ge concentration profile shows that the interfaces are not abrupt and that the narrow 0.8nm barrier layer does not reach the nominal pure Si composition. Speculation as to the presence of Ge interdiffusion, surface segregation or interface roughness is discussed.

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Author information

Authors and Affiliations

  1. University of Sheffield, Department of Engineering Materials, Sheffield, S1 3JD, UK

    I M Ross

  2. University of Sheffield, Department of Electronic and Electrical Engineering, Sheffield, S1 3JD, UK

    T Walther & A G Cullis

  3. SuperSTEM, Daresbury Laboratory, Keckwick Lane, Daresbury WA4 4AD, UK

    M Gass & A Bleloch

  4. University of Leeds, School of Electronic and Electrical Engineering, Leeds, LS2 9JT, UK

    L Lever, Z Ikonic, M Califano & R W Kelsall

  5. Department of Physics, Imperial College, London, SW7 2BZ, UK

    J Zhang

  6. Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK

    D J Paul

Authors
  1. I M Ross
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  2. M Gass
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  3. T Walther
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  4. A Bleloch
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  5. A G Cullis
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  6. L Lever
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  7. Z Ikonic
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  8. M Califano
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  9. R W Kelsall
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  10. J Zhang
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  11. D J Paul
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Editor information

Editors and Affiliations

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

    A. G. Cullis

  2. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK

    P. A. Midgley

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© 2008 Springer Science+Business Media B.V.

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Ross, I. et al. (2008). Structural and Compositional Properties of Strain-Symmetrized SiGe/Si Heterostructures. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_59

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