Abstract
Transitions in highly charged ions are particularly sensitive to QED effects, which scale rapidly with atomic number, Z. An experiment to determine the 2S Lamb shift in hydrogenic silicon, using ions trapped in the Oxford electron beam ion trap (EBIT) is in progress. The laser system required for the experiment is currently under development at the National Physical Laboratory (NPL); this involves locking a frequency-stabilised Ti:sapphire laser operating at 734 nm to a high finesse build-up cavity. This will be used to drive and measure the 2S1/2-2P3/2 transition in Si13+. The transition is much more sensitive to two-loop binding corrections in Si13+ than in lower-Z systems. Thus this measurement offers the opportunity to test the uncertainty of theoretical contributions which presently limit the ability of transitions in hydrogen and He+ to serve as calculable frequency standards. A better understanding of QED effects could also pave the way for calculable X-ray standards based on Δn > 0 transitions in high-Z hydrogenic systems.
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Klein, H.A. et al. (2001). Laser Spectroscopy of the 2S Lamb Shift in Hydrogenic Silicon. In: Karshenboim, S.G., Bassani, F., Pavone, F., Inguscio, M., Hänsch, T. (eds) The Hydrogen Atom. Lecture Notes in Physics, vol 570. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45395-4_46
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