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Determination of current-crowding effects on loss of light-output power in InGaN/GaN blue-light-emitting diodes

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Abstract

We analyzed the current-crowding process and its effects on carrier spill-over and light outputpower loss in InGaN/GaN blue-light-emitting diodes. When the current density was measured to be 3.1 times larger, the carrier spill-over was observed to be 1.9 times higher. The effects of current crowding on the loss of efficiency and on carrier spill-over were determined quantitatively. Through this analysis, we were able to correlate the degree of current crowding with the loss rate of lightoutput power. When the injected current was increased 2.5 times, the current-spreading length decreased 1.2 times, and the loss rate of the light-output power increased from 5% to 12%.

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Authors and Affiliations

  1. Department of Physics, Kongju National University, Gongju, 314-701, Korea

    Hye-Jung Yu, Yanqun Dong, Tae-Soo Kim, **-Gyu Lee, Nan-Cho Oh & Jung-Hoon Song

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  1. Hye-Jung Yu
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  2. Yanqun Dong
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  3. Tae-Soo Kim
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  4. **-Gyu Lee
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  5. Nan-Cho Oh
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  6. Jung-Hoon Song
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Correspondence to Jung-Hoon Song.

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Yu, HJ., Dong, Y., Kim, TS. et al. Determination of current-crowding effects on loss of light-output power in InGaN/GaN blue-light-emitting diodes. Journal of the Korean Physical Society 67, 346–349 (2015). https://doi.org/10.3938/jkps.67.346

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  • DOI: https://doi.org/10.3938/jkps.67.346

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