Abstract
The effects of Ho and Ni do** alone and of co-do** with Ho and Ni on the structural, electrical and ferrolectric properties of BiFeO3 thin films are reported. Pure BiFeO3, (Bi0.9Ho0.1)FeO3, Bi(Fe0.98Ni0.02)O3−δ , and (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. From the experimental results, the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film exhibited superior ferroelectric properties. A lower leakage current density and an improved ferroelectric properties were observed in the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film compared to the BiFeO3 thin film. The improvements could be explained by the reduction of bismuth and oxygen vacancies, the formation of defect dipoles, and a change in the microstructure.
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References
D. Khomski, Nature 2, 20 (2009).
J. Ma, J. Hu, Z. Li and C. W. Nan, Adv. Mater. 23, 1062 (2011).
M. K. Singh, H. M. Jang, S. Ryu and M. H. Jo, Appl. Phys. Lett. 88, 042907 (2006).
W. Eerenstein, N. D. Mathur and J. F. Scott, Nature 442, 59 (2006).
Y. H. Lee, J. M. Wu, Y. L. Chueh and L. J. Chou, Appl. Phys. Lett. 87, 172901 (2005).
M. Li, Z. Hu, L. Pei, J. Liu, J. Wang, B. Yu and X. Zhao, Ferroelectr. 410, 3 (2011).
Z. Hu, M. Li, Y. Yu, J. Liu, L. Pei, J. Wang, X. Liu, B. Yu and X. Zhao, Solid State Commun. 150, 1088 (2010).
C. M. Raghavan, J. W. Kim, H. J. Kim, W-J. Kim and S. S. Kim, J. Sol-Gel Sci. Technol. 64, 178 (2012).
X. Zhang, Y. Sui, X. Wang, Y. Wang and Z. Wang, J. Alloys Compd. 507, 157 (2010).
J. K. Kim, S. S. Kim, W-J. Kim, A. S. Bhalla and R. Guo, Appl. Phys. Lett. 88, 132901 (2006).
T. Kawae, Y. Terauchi, H. Tsuda, M. Kumeda and A. Morimoto, Appl. Phys. Lett. 94, 112904 (2004).
Y. Wang and C-W. Nan, Appl. Phys. Lett. 89, 052903 (2006).
C-H. Yang, D. Kan, I. Takeuchi, V. Nagarajan and J. Seidel, Phys. Chem. Chem. Phys. 14, 15953 (2012).
X. Qi, J. Dho, R. Tomov, M. G. Blamire and J. L. M. Driscoll, Appl. Phys. Lett. 86, 062903 (2005).
Y. J. Kim, J. W. Kim and S. S. Kim, J. Sol-Gel Sci. Technol. 66, 38 (2013).
G. Kartopu, A. Lahmar, S. Habouti, C.-L. Solterbeck, B. Elouadi and M. Es-Souni, Appl. Phys. Lett. 92, 151910 (2008).
Y. Wang and C-W. Nan, J. Appl. Phys. 103, 114104 (2008).
X. Zheng, Q. Xu, Z. Wen, X. Lang, D. Wu, T. Qiu and M. X. Xu, J. Alloys Compd. 499, 108 (2010).
K. Yin, M. Li, Y. Liu, C. He, F. Zhuge, B. Chen, W. Lu, X. Pan and R-W. Li, Appl. Phys. Lett. 90, 042912 (2007).
G. D. Hu, S. H. Fan, C. H. Yang and W. B. Wu, Appl. Phys. Lett. 92, 192905 (2008).
C. Wang, M. Takahashi, H. Fu**o, X. Zhao, E. Kume, T. Horiuchi and S. Sakai, J. Appl. Phys. 99, 054104 (2006).
F. Yan, M-O. Lai, L. Lu and T-J. Zhu, J. Phys. Chem. C 114, 6994 (2010).
B. Nagaraj, S. Aggarwal and R. Ramesh, J. Appl. Phys. 90, 375 (2001).
P. J. Schorn, U. Böttger and R. Waser, Appl. Phys. Lett. 87, 242902 (2005).
S-H. Kim, C. Y. Koo, D-Y. Park, D-S. Lee, J-H. Yeom, J. Ha, J. Limand C. S. Hwang, J. Korean Phys. Soc. 42, S1417 (2003).
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Kim, J.W., Raghavan, C.M., Choi, J.Y. et al. Effects of Ho- and Ni-do** alone and of co-do** on the structural and the electrical properties of BiFeO3 thin films. Journal of the Korean Physical Society 66, 1051–1056 (2015). https://doi.org/10.3938/jkps.66.1051
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DOI: https://doi.org/10.3938/jkps.66.1051