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Reduction of leakage current in InGaN-based LEDs with V-pit embedded structures

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Abstract

We investigated the effects of V-pit structures embedded in the active region of n-GaN on the leakage current and the emission efficiency in InGaN/GaN light-emitting diodes (LEDs). Size-controlled V-pits were used for dislocation filtering. The V-shaped pit size was controlled by manipulating the growth temperature and pressure. The highest reverse voltage value was achieved with 150- nm-sized V-pit-embedded LEDs, which could be attributed to effective blocking of the threading dislocations that were acting as a leakage current source.

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Authors and Affiliations

  1. Department of Electronic Engineering, Hanyang University, Seoul, 133-791, Korea

    **sub Park

  2. Faculty of Applied Chemical Engineering, Chonnam National University, Gwangju, 500-757, Korea

    Jun-Seok Ha

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  1. **sub Park
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Correspondence to Jun-Seok Ha.

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Park, J., Ha, JS. Reduction of leakage current in InGaN-based LEDs with V-pit embedded structures. Journal of the Korean Physical Society 60, 1367–1370 (2012). https://doi.org/10.3938/jkps.60.1367

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  • DOI: https://doi.org/10.3938/jkps.60.1367

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