Abstract
The problem of in situ temperature control during the growth of epitaxial layers of HgCdTe by molecular beam epitaxy is considered. Various approaches to solving the problem using spectroscopic ellipsometry are proposed. They are based on the temperature dependence of the optical constants spectra of the CdTe buffer layer and the growing HgCdTe layer. The results of experimental testing of these methods are presented, which show that the temperature measurement accuracy is several degrees, and the sensitivity reaches fractions of a degree. At the stage of stationary growth, it is possible to determine the change not only in the temperature, but also in the composition of the growing layer from the ellipsometric spectra.
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REFERENCES
J. Garland, ‘‘MBE growth of mercury cadmium telluride,’’ in Mercury Cadmium Telluride. Growth, Properties and Applications, Ed. by P. Capper and J. Garland (Wiley, 2011), pp. 131–150. https://doi.org/10.1002/9780470669464.ch7
J. W. Garland and S. Sivananthan, ‘‘Molecular-beam epitaxial growth of HgCdTe,’’ in Springer Handbook of Crystal Growth, Ed. by G. Dhanaraj, K. Byrappa, V. Prasad, and M. Dudley (Springer, Berlin, 2010), pp. 1069–1132. https://doi.org/10.1007/978-3-540-74761-1_32
G. L. Olson, J. A. Roth, P. D. Brewer, R. D. Rajavel, D. M. Jamba, J. E. Jensen, and B. Johs, ‘‘Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE,’’ J. Electron. Mater. 28, 749–755 (1999). https://doi.org/10.1007/s11664-999-0065-3
I. V. Sabinina, A. K. Gutakovsky, Y. G. Sidorov, and A. Latyshev, ‘‘Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy,’’ J. Cryst. Growth 274, 339–346 (2005). https://doi.org/10.1016/j.jcrysgro.2004.10.053
P. A. Bakhtin, V. S. Varavin, S. A. Dvoretskii, et al., ‘‘Anisotropy of conductivity of films Cd\({}_{x}\)Hg\({}_{1-x}\)Te with periodic surface microrelief grown by molecular beam epitaxy method,’’ Avtometriya 38 (2), 83–91 (2002).
I. A. Azarov, V. A. Shvets, S. A. Dulin, N. N. Mikhailov, S. S. Dvoretskii, D. G. Ikusov, I. N. Uzhakov, and S. V. Rykhlitskii, ‘‘Polarization pyrometry of layered semiconductor structures under conditions of low-temperature technological processes,’’ Optoelectron., Instrum. Data Process. 53, 630–638 (2017). https://doi.org/10.15372/AUT20170612
M. Daraselia, C. H. Grein, S. Rujirawat, B. Yang, S. Sivananthan, F. Aqariden, and H. D. Shih, ‘‘In-Situ monitoring of temperature and alloy composition of Hg\({}_{1-x}\)Cd\({}_{x}\)Te using FTIR spectroscopic techniques,’’ J. Electron. Mater. 28, 743–748 (1999). https://doi.org/10.1007/s11664-999-0064-4
R. Schlereth, J. Hajer, L. Fürst, S. Schreyeck, H. Buhmann, and L. W. Molenkamp, ‘‘Band edge thermometry for the MBE growth of (Hg,Cd)Te-based materials,’’ J. Cryst. Growth 537, 125602 (2020). https://doi.org/10.1016/j.jcrysgro.2020.125602
L. A. Almedia, N. K. Dhar, M. Martinka, and J. H. Dinan, ‘‘HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature,’’ J. Electron. Mater. 29, 754–759 (2000). https://doi.org/10.1007/s11664-000-0220-3
I. A. Azarov, D. V. Marin, V. A. Shvets, and M. V. Yakushev, ‘‘On the possibility of controlling the CdTe temperature in the MBE method using an ellipsometer,’’ in FOTONIKA 2017: Theses of Russ. Conf. on Actual Problems of Photoelectronics, Novosibirsk, 2017, P. 119.
E. V. Spesivtsev, S. V. Rykhlitskii, and V. A. Shvets, ‘‘Development of methods and instruments for optical ellipsometry at the Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences,’’ Optoelectron., Instrum. Data Process. 47, 419–425 (2011). https://doi.org/10.3103/S8756699011050219
R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1977).
V. A. Shvets, I. A. Azarov, D. V. Marin, M. V. Yakushev, and S. V. Rykhlitskii, ‘‘Ellipsometric method for measuring the CdTe buffer-layer temperature in the molecular-beam epitaxy of CdHgTe,’’ Semiconductors 53, 132–137 (2019). https://doi.org/10.1134/S1063782619010196
D. V. Marin, V. A. Shvets, I. A. Azarov, M. V. Yakushev, and S. V. Rykhlitskii, ‘‘Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride,’’ Infrar. Phys. Technol. 116, 103793 (2021). https://doi.org/10.1016/j.infrared.2021.103793
V. A. Shvets, D. V. Marin, V. G. Remesnik, I. A. Azarov, M. V. Yakushev, and S. V. Rykhlitskii, ‘‘Parametric model of the optical constant spectra of Hg\({}_{1-x}\)Cd\({}_{x}\)Te and determination of the compound composition,’’ Opt. Spectrosc. 128, 1948–1953 (2020). https://doi.org/10.1134/S0030400X20121042
A. A. Babenko, D. V. Brunev, Yu. G. Sidorov, V. A. Shvets, and M. V. Yakushev, ‘‘Interaction of cadmium vapor with the surface of Cd\({}_{x}\)Hg\({}_{1-x}\)Te layers during molecular beam epitaxial growth on GaAs substrates,’’ Inorg. Mater. 44, 366–370 (2008). https://doi.org/10.1134/S0020168508040079
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Translated by E. Oborin
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Shvets, V.A., Marin, D.V., Azarov, I.A. et al. Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers. Optoelectron.Instrument.Proc. 57, 476–484 (2021). https://doi.org/10.3103/S8756699021050150
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DOI: https://doi.org/10.3103/S8756699021050150