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Resistive switching and diode properties of mesoscopic niobium oxide-based structures

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The bipolar effects of resistive switching (BRS) in mesoscopic heterostrucures based on amorphous and crystalline niobium oxide films are considered. The BRS effect is more pronounced in the structures based on multiphase nanocrystalline niobium oxide films. It is shown that the threshold frequency for observing the BRS effect is of the order of 104 Hz. Switching is controlled via oxygen electrodiffusion to vacancies as the do** level of the contact area and the resistive properties of the heterocontact change.

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Authors and Affiliations

  1. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, 142432, Russia

    N. A. Tulina, A. N. Rossolenko, I. M. Shmytko & A. M. Ionov

  2. National Research Nuclear University (MEPhI), Moscow, 115409, Russia

    A. A. Ivanov

  3. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432, Russia

    I. Yu. Borisenko

Authors
  1. N. A. Tulina
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  2. A. N. Rossolenko
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  3. I. Yu. Borisenko
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  4. I. M. Shmytko
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  5. A. M. Ionov
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  6. A. A. Ivanov
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Corresponding author

Correspondence to N. A. Tulina.

Additional information

Original Russian Text © N.A. Tulina, A.N. Rossolenko, I.Yu. Borisenko, I.M. Shmytko, A.M. Ionov, A.A. Ivanov, 2015, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2015, Vol. 79, No. 6, pp. 836–839.

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Tulina, N.A., Rossolenko, A.N., Borisenko, I.Y. et al. Resistive switching and diode properties of mesoscopic niobium oxide-based structures. Bull. Russ. Acad. Sci. Phys. 79, 759–762 (2015). https://doi.org/10.3103/S1062873815060325

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  • DOI: https://doi.org/10.3103/S1062873815060325

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