Abstract
Sputter erosion depths in Si films deposited on Al substrates by PVD, CVD and plasma spay methods were measured after exposure to As+ ions in a DC implanter beam and Ga+ ions with a scanned FIB. Erosion depths are measured by optical methods. Metallic contamination in the deposited Si films were measured with RBS. Si surface textures were examined by SEM.
Graphical abstract
Si erosion depths for As+ and Ga+ ions normalized to 40 keV As+ nuclear stop** powers
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References
L. Stone et al., Performance of new silicon-coated disk materials: manufacturing control & device production experience. IIT 98, 574–577 (1998)
H. Kawaguchi et al., Monitoring system for silicon coating thickness of disk. IIT 2000, 662–665 (2000)
M.I. Current, T. Ido, Y. Horio, H. Fujibuchi, Ion erosion and particle release in graphite materials. IIT 18, 319–322 (2018)
P. Sigmund, Theory of sputtering 1. Sputtering yield of amorphous and polycrystalline targets. Phys. Rev. 184, 383 (1969)
P. Chen et al., Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition. JVST-B 27(6), 2718–2721 (2009)
S. Qin et al., Measurements of secondary electron emission and plasma density enhancement for plasma exposed surfaces using an optically isolated Faraday cup. Rev. Sci. Instr. 73(3), 1153–1156 (2002)
Acknowledgments
For the As+ beamline implants, expert handlers assisted for preparing and operating the NV10 beamline at Innovion, San Jose, CA, now part of Coherent Corp. RBS analysis was done by Daniel Tseng and others at EurofinsEAG, Sunnyvale, CA.
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Lead author provides services for Si coating of ion beam systems. Data were collected and anlayized independently by other authors.
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Wriggins, W., Wong, M., Green, A. et al. Ion erosion and elemental purity of deposited Si films on Al. MRS Advances 7, 1441–1444 (2022). https://doi.org/10.1557/s43580-022-00435-8
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DOI: https://doi.org/10.1557/s43580-022-00435-8