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Electro-thermal simulations of beyond-CMOS vanadium dioxide devices and oscillators

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Abstract

Vanadium dioxide (\(\hbox {VO}_{{2}}\)) devices undergo a thermal insulator-metal-transition by current or voltage injection. In this work, we utilize a dedicated Technology Computer-Aided Design (TCAD) modeling approach to simulate thermal-induced resistive switching effects in \(\hbox {VO}_{{2}}\) devices. In particular, we investigate how the heat dissipation modulates the \(\hbox {VO}_{{2}}\) device behavior. We employ a mixed-mode Simulation Program with Integrated Circuit Emphasis (SPICE)—TCAD approach to simulate the relaxation oscillator circuit based on \(\hbox {VO}_{{2}}\) device, and we show the entangled self-oscillatory behavior of temperature and voltage across the device. Our findings provide essential guidelines for the design of \(\hbox {VO}_{{2}}\) oscillators to be exploited to realize oscillatory neural networks circuits for neuromorphic computing.

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Data availability

The datasets generated during the current study are available from the corresponding author on reasonable request.

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Acknowledgments

Authors wish to thank Dr. Ahmed Nejim and Dr. Andrew Plews, of Silvaco Europe Ltd., Cambridgeshire, United Kingdom, for providing the customized version of the PCM model used to simulate the \(\hbox {VO}_{{2}}\) material as well as for the valuable discussions about the TCAD and mixed-mode simulations. This work was supported by the European Union’s Horizon 2020 research and innovation programme, EU H2020 NEURONN (www.neuronn.eu) project under Grant 871501.

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Authors and Affiliations

  1. Microelectronics Department, LIRMM, University of Montpellier, CNRS, 161 rue Ada, 34095, Montpellier, France

    Stefania Carapezzi, Gabriele Boschetto & Aida Todri-Sanial

  2. Department of Science and Technology, IBM Research Europe - Zurich, Saumerstrasse 4, 8803, Ruschlikon, Switzerland

    Siegfried Karg

Authors
  1. Stefania Carapezzi
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  2. Gabriele Boschetto
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  3. Siegfried Karg
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  4. Aida Todri-Sanial
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Contributions

SC conceived the study concept and designed the simulations. SC performed all the simulations and analyzed the data. SC and ATS evaluated and interpreted the data. SC drafted the manuscript. GB, SK and ATS critically revised the manuscript. ATS supervised the study. The manuscript has been read and approved by all authors.

Corresponding authors

Correspondence to Stefania Carapezzi or Aida Todri-Sanial.

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All authors declare that they have no conflict of interest

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Carapezzi, S., Boschetto, G., Karg, S. et al. Electro-thermal simulations of beyond-CMOS vanadium dioxide devices and oscillators. MRS Communications 12, 427–433 (2022). https://doi.org/10.1557/s43579-022-00196-3

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  • DOI: https://doi.org/10.1557/s43579-022-00196-3

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