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Effect of dislocations and impurities on carrier transport in α-Ga2O3 on m-plane sapphire substrate

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Abstract

Carrier transport mechanism in Si-doped n-type α-Ga2O3 thin film on m-plane sapphire substrate was investigated by temperature-dependent Hall effect measurements (30–300 K). All films show dislocation density of about ~ 1010–1011 cm−2. In non-degenerate α-Ga2O3, an impurity-band effect is obvious in the low temperature region, and dislocation scattering is the dominant scattering mechanism. In contrast, in degenerate α-Ga2O3, although the dislocation density is comparable to the non-degenerate one, the mobility is dominated by ionized impurity scattering, due to the heavy screening of charged dislocations. The analysis indicates that the carrier transport mechanism in α-Ga2O3 with high dislocation density is different from each other depending on whether α-Ga2O3 is degenerate or non-degenerate. Finally, we estimate critical dislocation density for dislocation-insensitive mobility in α-Ga2O3 on sapphire substrate, and indicate that dislocation densities below ~ 1 × 107–1 × 108 cm−2 will be required for lightly doped drift layers in devices.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Acknowledgments

This work was, in part, supported by MIC research and development (JPMI00316). H.T. acknowledges JST, the establishment of university fellowships towards the creation of science technology innovation, Grant Number JPMJFS2123.

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Authors and Affiliations

  1. Department of Material Chemistry, Kyoto University, Kyoto, 615-8510, Japan

    Hitoshi Takane, Takeru Wakamatsu & Katsuhisa Tanaka

  2. Department of Electronic Science and Engineering, Kyoto University, Kyoto, 615-8510, Japan

    Hitoshi Takane & Kentaro Kaneko

  3. Hyogo Prefectural Institute of Technology, Hyogo, 654-0037, Japan

    Hirokazu Izumi

  4. Department of Advanced Materials Science and Engineering, Kyushu University, Fukuoka, 816-8580, Japan

    Hajime Hojo

  5. Engineering Education Research Center, Kyoto University, Kyoto, 615-8530, Japan

    Kentaro Kaneko

  6. Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto, 615-8520, Japan

    Kentaro Kaneko

  7. Research Organization of Science and Technology, Ritsumeikan University, Shiga, 525-8577, Japan

    Kentaro Kaneko

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  1. Hitoshi Takane
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Correspondence to Hitoshi Takane.

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Takane, H., Izumi, H., Hojo, H. et al. Effect of dislocations and impurities on carrier transport in α-Ga2O3 on m-plane sapphire substrate. Journal of Materials Research 38, 2645–2654 (2023). https://doi.org/10.1557/s43578-023-01015-8

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