Abstract
Lower absorption, lower refractive index and tunable resistance are three advantages of doped silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to doped microcrystalline silicon, for the use as p- and n-type layers in thin-film silicon solar cells. In this study we show how optical, electrical and microstructural properties of nc-SiOx layers depend on precursor gas ratios and we propose a growth model to explain the phase separation in such films into Si-rich and O-rich regions as visualized by energy-filtered transmission electron microscopy.
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Cuony, P., Alexander, D.T.L., Löfgren, L. et al. Mixed phase silicon oxide layers for thin-film silicon solar cells. MRS Online Proceedings Library 1321, 1202 (2011). https://doi.org/10.1557/opl.2011.813
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DOI: https://doi.org/10.1557/opl.2011.813